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2SC4116-BL(TE85LF

Name: 2SC4116-BL(TE85LF
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: 2SC4116-BL(TE85LF
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: 2SC4116-BL(TE85LF
Description:: Trans GP BJT NPN 50V 0.15A 100mW Automotive 3-Pin USM T/R

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage 2SC4116-BL(TE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC4116-BL(TE85LF.

Mounting: SMD (SMT)
Case / Package: SC
Collector Base Voltage (VCBO): 60 V
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Saturation Voltage: 100 mV
Collector Emitter Voltage (VCEO): 50 V
Element Configuration: Single
Emitter Base Voltage (VEBO): 5 V
Frequency: 80 MHz
Gain Bandwidth Product: 80 MHz
Height: 900 µm
hFE Min: 70
Length: 2 mm
Max Breakdown Voltage: 50 V
Max Collector Current: 150 mA
Maximum Operating Temperature: 125 °C
Max Power Dissipation: 100 mW
Min Operating Temperature: -55 °C
Mount: Surface Mount
Number of Elements: 1
Number of Pins: 3
Packaging: Tape & Reel
Polarity: NPN
Power Dissipation: 100 mW
Radiation Hardening: No
RoHS: Compliant
Transition Frequency: 80 MHz
Width: 1.25 mm
Categories: RF Transistors(BJT)
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Low
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Shortage

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