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2SC5085-O(TE85L,F)

RF Transistors (BJT)

Manufacturer No:
2SC5085-O(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
2SC5085-O(TE85L,F)
Description:
TRANS RF NPN 12V 1MHZ USM

In Stock

50000 pcs On sales

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage 2SC5085-O(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SC5085-O(TE85L,F).

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
NPN
VCEO Maximum Collector-Emitter Breakdown Voltage
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1dB @ 500MHz
Maximum Power Dissipation
100mW
Typical Gain (hFE) (Min)
80 @ 20mA, 10V
Maximum Current Collector
80mA
Temperature Range - Operating
125°C (TJ)
Mounting
SMD (SMT)
Case / Package
USM
Popularity
Medium
Fake Threat In the Open Market
50 pct.
Supply and Demand Status
Sufficient

Company Profile

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