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2SD1662(F)

Name: 2SD1662(F)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: 2SD1662(F)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: 2SD1662(F)
Description:: Trans Darlington NPN 100V 15A 100000mW 3-Pin(3+Tab) TO-3PN

In Stock

0 pcs On sales

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage 2SD1662(F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SD1662(F).

Collector Base Voltage (VCBO): 100 V
Collector Emitter Saturation Voltage: 1.5 V
Collector Emitter Voltage (VCEO): 100 V
Emitter Base Voltage (VEBO): 5 V
Height: 20 mm
Lead Free: Yes
Length: 15.9 mm
Max Collector Current: 15 A
Maximum Operating Temperature: 150 °C
Max Power Dissipation: 100 W
Mount: Through Hole
Number of Pins: 3
RoHS: Compliant
Width: 4.8 mm
Categories: RF Transistors(BJT)
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Low
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Shortage

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