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2SD2406-Y

Transistors (BJT) - Single

Manufacturer No:
2SD2406-Y
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
2SD2406-Y
Description:
TRANS NPN 80V 4A TO220NIS

In Stock

1700 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage 2SD2406-Y technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 2SD2406-Y.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Tube/Rail
Status
Obsolete(EOL)
Transistor Polarity
NPN
Maximum Current Collector
4A
VCEO Maximum Collector-Emitter Breakdown Voltage
80V
Max Vce (sat)
1.5V @ 300mA, 3A
Collector Cut-off Current(Max)
30μA (ICBO)
Typical Gain (hFE) (Min)
120 @ 500mA, 5V
Maximum Power Dissipation
25W
Frequency - Transition
8MHz
Temperature Range - Operating
150°C (TJ)
Mounting
Through Hole
Case / Package
TO-220NIS
Popularity
Medium
Fake Threat In the Open Market
42 pct.
Supply and Demand Status
Limited

Company Profile

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2SD2406-Y Relevant information

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