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GT30J121(Q)
- Manufacturer No:
- GT30J121(Q)
- Manufacture:
- Toshiba Semiconductor and Storage
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
- GT30J121(Q)
- Description:
- IGBT 600V 30A 170W TO3PN / IGBT 600 V 30 A 170 W Through Hole TO-3P(N)
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0 pcs On sales
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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage GT30J121(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage GT30J121(Q).
- Category
- Discrete Semiconductor Products>Transistors - IGBTs - Single
- Mfr
- Toshiba Semiconductor and Storage
- Package
- Tube
- Voltage - Collector Emitter Breakdown (Max)
- 600 V
- Current - Collector (Ic) (Max)
- 30 A
- Current - Collector Pulsed (Icm)
- 60 A
- Vce(on) (Max) @ Vge, Ic
- 2.45V @ 15V, 30A
- Power - Max
- 170 W
- Switching Energy
- 1mJ (on), 800µJ (off)
- Input Type
- Standard
- Td (on/off) @ 25°C
- 90ns/300ns
- Test Condition
- 300V, 30A, 24Ohm, 15V
- Mounting Type
- Through Hole
- Package / Case
- TO-3P-3, SC-65-3
- Supplier Device Package
- TO-3P(N)
- Base Product Number
- GT30J121
- MSL Level
- 1 (Unlimited)
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Standard Package
- 50
- Fake Threat In the Open Market
- 60 pct.
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