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GT60N321(Q)
- Manufacturer No:
- GT60N321(Q)
- Manufacture:
- Toshiba Semiconductor and Storage
- Datasheet:
- GT60N321(Q)
- Description:
- IGBT 1000V 60A 170W TO3P LH
In Stock
0 pcs On sales
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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Toshiba Semiconductor and Storage GT60N321(Q) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage GT60N321(Q).
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Toshiba Semiconductor and Storage
- Packaging
- Tube/Rail
- Status
- Obsolete(EOL)
- VCEO Maximum Collector-Emitter Breakdown Voltage
- 1000V
- Maximum Current Collector
- 60A
- Pulsed Collector Current
- 120A
- Collector-emitter saturation voltage(Max)
- 2.8V @ 15V, 60A
- Maximum Power Dissipation
- 170W
- Input Type
- Standard
- Turn-on and Turn-off delay time
- 330ns/700ns
- Reverse Recovery Time (trr)
- 2.5μs
- Temperature Range - Operating
- 150°C (TJ)
- Mounting
- Through Hole
- Case / Package
- TO-3P(LH)
- Popularity
- Medium
- Fake Threat In the Open Market
- 55 pct.
- Supply and Demand Status
- Balance
- Application Field
- Used in Power Management
Company Profile
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