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HN3C51F-GR

Name: HN3C51F-GR
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays

Manufacturer No:: HN3C51F-GR
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: HN3C51F-GR
Description:: TRANS 2NPN 120V 0.1A SM6

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0 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage HN3C51F-GR technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage HN3C51F-GR.

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel - TR
Status: Obsolete(EOL)
Transistor Polarity: 2 NPN (Dual)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 300mV @ 1mA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2mA, 6V
Maximum Power Dissipation: 300mW
Frequency - Transition: 100MHz
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Case / Package: SM6
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

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