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MT3S111TU,LF

RF Transistors (BJT)

Manufacturer No:
MT3S111TU,LF
Manufacture:
Toshiba Semiconductor and Storage
Package:
3-SMD, Flat Lead
Datasheet:
MT3S111TU,LF

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage MT3S111TU,LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage MT3S111TU,LF.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
10GHz
Noise Figure (dB Typ @ f)
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain
12.5dB
Power - Max
800mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Temperature Range - Operating
150°C (TJ)
Mounting
SMD (SMT)
Package / Case
3-SMD, Flat Lead
Supplier Device Package
UFM
Base Product Number
MT3S111
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Fake Threat In the Open Market
65 pct.

Company Profile

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