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RN1507(TE85L,F)

RF Transistors (BJT)

Manufacturer No:
RN1507(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Package:
SC-74A, SOT-753
Datasheet:
RN1507(TE85L,F)
Description:
TRANS 2NPN PREBIAS 0.3W SMV / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMV

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage RN1507(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1507(TE85L,F).

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
300mW
Mounting
SMD (SMT)
Package / Case
SC-74A, SOT-753
Supplier Device Package
SMV
Base Product Number
RN1507
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN1507TE85LF,RN1507(TE85LF)CT,RN1507(TE85LF)DKR,RN1507(TE85LF)TR
Standard Package
3,000
Fake Threat In the Open Market
48 pct.

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