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RN1902T5LFT

Name: RN1902T5LFT
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN1902T5LFT
Manufacture:: Toshiba Semiconductor and Storage
Package:: 6-TSSOP, SC-88, SOT-363
Datasheet:: RN1902T5LFT
Description:: TRANS 2NPN PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

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Product Attribute

Toshiba Semiconductor and Storage RN1902T5LFT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1902T5LFT.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting: SMD (SMT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Base Product Number: RN1902
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095
Other Names: RN1902T5LFTCT,RN1902T5LFTTR,RN1902(T5L,F,T),RN1902T5LFTDKR
Standard Package: 3,000
Fake Threat In the Open Market: 79 pct.

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