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RN2107MFV,L3F

Name: RN2107MFV,L3F
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN2107MFV,L3F
Manufacture:: Toshiba Semiconductor and Storage
Package:: SOT-723
Datasheet:: RN2107MFV,L3F
Description:: TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

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Product Attribute

Toshiba Semiconductor and Storage RN2107MFV,L3F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2107MFV,L3F.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Series: *
Package: Bulk
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 150 mW
Mounting: SMD (SMT)
Package / Case: SOT-723
Supplier Device Package: VESM
Base Product Number: RN2107
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095
Other Names: RN2107MFV,L3F(B,RN2107MFV,L3F(T,RN2107MFVL3F
Standard Package: 8,000
Fake Threat In the Open Market: 54 pct.

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