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RN2110MFV,L3F

Name: RN2110MFV,L3F
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

OEM Parts (O - R)

Manufacturer No:: RN2110MFV,L3F
Manufacture:: Toshiba Semiconductor and Storage
Package:: SOT-723
Datasheet:: RN2110MFV,L3F
Description:: TRANS PREBIAS PNP 50V 0.1A VESM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN2110MFV,L3F technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2110MFV,L3F.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel (TR)
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 150 mW
Mounting: SMD (SMT)
Package / Case: SOT-723
Supplier Device Package: VESM
Base Product Number: RN2110
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095
Other Names: RN2110MFVL3F
Standard Package: 8,000
Fake Threat In the Open Market: 78 pct.

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