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RN2314(TE85L,F)

RF Transistors (BJT)

Manufacturer No:
RN2314(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Package:
SC-70, SOT-323
Datasheet:
RN2314(TE85L,F)
Description:
TRANS PREBIAS PNP 50V 0.1A USM / Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 100 mW Surface Mount SC-70

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN2314(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2314(TE85L,F).

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
100 mW
Mounting
SMD (SMT)
Package / Case
SC-70, SOT-323
Supplier Device Package
SC-70
Base Product Number
RN2314
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN2314TE85LF,RN2314(TE85LF)-ND,RN2314(TE85LF)TR,RN2314(TE85LF)CT,RN2314(TE85LF),RN2314(TE85LF)DKR
Standard Package
3,000
Fake Threat In the Open Market
84 pct.

Company Profile

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