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RN2422TE85LF

Transistors (BJT) - Single, Pre - Biased

Manufacturer No:
RN2422TE85LF
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
RN2422TE85LF
Description:
TRANS PREBIAS PNP 200MW SMINI

In Stock

2960 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN2422TE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2422TE85LF.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
PNP - Pre-Biased
Maximum Current Collector
800mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
2.2k
Typical Gain (hFE) (Min)
65 @ 100mA, 1V
Max Vce (sat)
250mV @ 1mA, 50mA
Collector Cut-off Current(Max)
500nA
Frequency - Transition
200MHz
Maximum Power Dissipation
200mW
Mounting
SMD (SMT)
Case / Package
S-Mini
Popularity
Medium
Fake Threat In the Open Market
41 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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