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RN2712JE(TE85L,F)

Name: RN2712JE(TE85L,F)
Brand: Toshiba Semiconductor and Storage
Price: 12.05 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:: RN2712JE(TE85L,F)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN2712JE(TE85L,F)
Description:: TRANS 2PNP PREBIAS 0.1W ESV

In Stock

8610 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN2712JE(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2712JE(TE85L,F).

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel - TR
Status: Active
Transistor Polarity: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Resistor - Base (R1) (Ohms): 22k
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Maximum Power Dissipation: 100mW
Mounting: SMD (SMT)
Case / Package: ESV
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

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