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RN2904(T5L,F,T)

RF Transistors (BJT)

Manufacturer No:
RN2904(T5L,F,T)
Manufacture:
Toshiba Semiconductor and Storage
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
RN2904(T5L,F,T)
Description:
TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

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Delivery Time
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Product Attribute

Toshiba Semiconductor and Storage RN2904(T5L,F,T) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2904(T5L,F,T).

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Product Status
Obsolete
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
200mW
Mounting
SMD (SMT)
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Base Product Number
RN2904
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RN2904(T5LFT)TR,RN2904(T5LFT)DKR,RN2904(T5LFT)CT
Standard Package
3,000
Fake Threat In the Open Market
57 pct.

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