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RN2905T5LFT

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
RN2905T5LFT
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
RN2905T5LFT
Description:
TRANS 2PNP PREBIAS 0.2W US6

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366700 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN2905T5LFT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2905T5LFT.

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 PNP - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
2.2k
Resistor - Emitter Base (R2) (Ohms)
47k
Typical Gain (hFE) (Min)
80 @ 10mA, 5V
Max Vce (sat)
300mV @ 250μA, 5mA
Collector Cut-off Current(Max)
100nA (ICBO)
Frequency - Transition
200MHz
Maximum Power Dissipation
200mW
Mounting
SMD (SMT)
Case / Package
US6
Popularity
Medium
Fake Threat In the Open Market
64 pct.
Supply and Demand Status
Sufficient

Company Profile

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