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RN2906FE,LF(CT

OEM Parts (O - R)

Manufacturer No:
RN2906FE,LF(CT
Manufacture:
Toshiba Semiconductor and Storage
Package:
SOT-563, SOT-666
Datasheet:
RN2906FE,LF(CT
Description:
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

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Product Attribute

Toshiba Semiconductor and Storage RN2906FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2906FE,LF(CT.

Category
Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr
Toshiba Semiconductor and Storage
Package
Tape & Reel
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200MHz
Power - Max
100mW
Mounting
SMD (SMT)
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN2906
RoHS Status
RoHS non-compliant
MSL Level
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
RN2906FELF(CTTR,RN2906FE,LF(CB,RN2906FELF(CTCT,RN2906FELF(CTDKR
Standard Package
4,000
Fake Threat In the Open Market
59 pct.

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