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RN2907FE,LF

Name: RN2907FE,LF
Brand: Toshiba Semiconductor and Storage
Price: 0.83 USD
Rating: 4.8 (6586 reviews)

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:: RN2907FE,LF
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN2907FE,LF
Description:: TRANS 2PNP PREBIAS 0.1W ES6

In Stock

53400 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN2907FE,LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2907FE,LF.

Categories: Discrete Semiconductor Products
Manufacturer: Toshiba Semiconductor and Storage
Packaging: Reel - TR
Status: Active
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Frequency - Transition: 200MHz
Maximum Power Dissipation: 100mW
Mounting: SMD (SMT)
Case / Package: ES6
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

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