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RN2962(TE85L,F)

Transistors (BJT) - Arrays, Pre - Biased

Manufacturer No:
RN2962(TE85L,F)
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
RN2962(TE85L,F)
Description:
TRANS 2PNP PREBIAS 0.2W US6

In Stock

1850 pcs On sales

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Product Attribute

Toshiba Semiconductor and Storage RN2962(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2962(TE85L,F).

Categories
Discrete Semiconductor Products
Manufacturer
Toshiba Semiconductor and Storage
Packaging
Reel - TR
Status
Active
Transistor Polarity
2 PNP - Pre-Biased (Dual)
Maximum Current Collector
100mA
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
10k
Resistor - Emitter Base (R2) (Ohms)
1k
Typical Gain (hFE) (Min)
50 @ 10mA, 5V
Max Vce (sat)
300mV @ 250μA, 5mA
Collector Cut-off Current(Max)
100nA (ICBO)
Frequency - Transition
200MHz
Maximum Power Dissipation
200mW
Mounting
SMD (SMT)
Case / Package
US6
Popularity
Medium
Fake Threat In the Open Market
57 pct.
Supply and Demand Status
Balance

Company Profile

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