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RN2965(TE85L,F)

Name: RN2965(TE85L,F)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN2965(TE85L,F)
Manufacture:: Toshiba Semiconductor and Storage
Package:: 6-TSSOP, SC-88, SOT-363
Datasheet:: RN2965(TE85L,F)
Description:: TRANS 2PNP PREBIAS 0.2W US6 / Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

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Product Attribute

Toshiba Semiconductor and Storage RN2965(TE85L,F) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN2965(TE85L,F).

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting: SMD (SMT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Base Product Number: RN2965
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095
Other Names: RN2965(TE85LF)DKR,RN2965(TE85LF)CT,RN2965(TE85LF)TR
Standard Package: 3,000
Fake Threat In the Open Market: 73 pct.

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