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RN4985(T5L,F,T)

Name: RN4985(T5L,F,T)
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: RN4985(T5L,F,T)
Manufacture:: Toshiba Semiconductor and Storage
Datasheet:: RN4985(T5L,F,T)
Description:: Trans Npn/pnp Prebias 0.2W US6

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0 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN4985(T5L,F,T) technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4985(T5L,F,T).

Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 300 mV
Continuous Collector Current: -100 mA
Element Configuration: Dual
Max Breakdown Voltage: 50 V
Max Collector Current: 100 µA
Max Operating Temperature: 150 °C
Max Power Dissipation: 200 mW
Mount: Surface Mount
Number of Pins: 6
Packaging: Cut Tape (CT)
Polarity: NPN, PNP
Power Dissipation: 200 mW
RoHS: Compliant
Transition Frequency: 200 MHz
Categories: RF Transistors(BJT)
Manufacturer: Toshiba Semiconductor and Storage
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

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