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RN4985FE,LF(CT

Name: RN4985FE,LF(CT
Brand: Toshiba Semiconductor and Storage
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Custom Parts (N - R)

Manufacturer No:: RN4985FE,LF(CT
Manufacture:: Toshiba Semiconductor and Storage
Package:: SOT-563, SOT-666
Datasheet:: RN4985FE,LF(CT
Description:: NPN + PNP BRT Q1BSR2.2KOHM Q1BER / Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

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Product Attribute

Toshiba Semiconductor and Storage RN4985FE,LF(CT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4985FE,LF(CT.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting: SMD (SMT)
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Base Product Number: RN4985
RoHS Status: RoHS non-compliant
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0075
Other Names: RN4985FE,LF(CB,RN4985FELF(CTDKR,RN4985FELF(CTTR,RN4985FELF(CTCT
Standard Package: 4,000
Fake Threat In the Open Market: 46 pct.

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