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RN4987T5LFT

RF Transistors (BJT)

Manufacturer No:
RN4987T5LFT
Manufacture:
Toshiba Semiconductor and Storage
Datasheet:
RN4987T5LFT
Description:
Trans Digital BJT NPN/PNP 50V 100mA 6-Pin US T/R

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Toshiba Semiconductor and Storage RN4987T5LFT technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4987T5LFT.

Collector Emitter Breakdown Voltage
50 V
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Dual
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Maximum Operating Temperature
150 °C
Max Power Dissipation
200 mW
Mount
Surface Mount
Number of Pins
6
Packaging
Digi-Reel®
Polarity
NPN, PNP
Radiation Hardening
No
RoHS
Compliant
Transition Frequency
200 MHz
Categories
RF Transistors(BJT)
Manufacturer
Toshiba Semiconductor and Storage
Popularity
Low
Fake Threat In the Open Market
59 pct.
Supply and Demand Status
Shortage

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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