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SI4418DY-T1-GE3

FETs - Single

Manufacturer No:
SI4418DY-T1-GE3
Manufacture:
Vishay
Datasheet:
SI4418DY-T1-GE3
Description:
MOSFET N-CH 200V 2.3A 8-SOIC

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0 pcs On sales

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Product Attribute

Vishay SI4418DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI4418DY-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Reel
Status
Obsolete
Transistor Polarity
N-Channel
Technology
MOSFET
Vds - Drain-Source Breakdown Voltage
200V
Id - Continuous Drain Current
2.3A
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Maximum) at Id, Vgs
130mOhm at 3A, 10V
Gate Source Voltage(th) (Maximum) at Id
4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
30nC at 10V
Gate Source Voltage (Maximum)
±20V
Power Dissipation (Maximum)
1.5W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Supplier Device Package
8-SO
Manufacturer Package
8-SOIC
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
30 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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