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SI4913DY-T1-GE3

FETs - Arrays

Manufacturer No:
SI4913DY-T1-GE3
Manufacture:
Vishay
Datasheet:
SI4913DY-T1-GE3
Description:
MOSFET 2P-CH 20V 7.1A 8-SOIC

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0 pcs On sales

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Product Attribute

Vishay SI4913DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI4913DY-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Reel
Status
Obsolete
Transistor Polarity
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Vds - Drain-Source Breakdown Voltage
20V
Id - Continuous Drain Current
7.1A
Rds On (Maximum) at Id, Vgs
15mOhm at 9.4A, 4.5V
Gate Source Voltage(th) (Maximum) at Id
1V at 500μA
Gate Charge (Qg) (Maximum) at Vgs
65nC at 4.5V
Maximum Power
1.1W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
8-SOIC
Supplier Device Package
8-SO
Family Part Number
SI4913
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
70 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

SI4913DY-T1-GE3 Relevant information

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SI4900DY-T1-GE3
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MOSFET 2N-CH 60V 5.3A 8-SOIC / Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

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