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SI4941EDY-T1-E3

FETs - Arrays

Manufacturer No:
SI4941EDY-T1-E3
Manufacture:
Vishay
Datasheet:
SI4941EDY-T1-E3
Description:
MOSFET 2P-CH 30V 10A 8-SOIC

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0 pcs On sales

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Product Attribute

Vishay SI4941EDY-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SI4941EDY-T1-E3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Reel
Status
Obsolete
Transistor Polarity
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Vds - Drain-Source Breakdown Voltage
30V
Id - Continuous Drain Current
10A
Rds On (Maximum) at Id, Vgs
21mOhm at 8.3A, 10V
Gate Source Voltage(th) (Maximum) at Id
2.8V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
70nC at 10V
Maximum Power
3.6W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
8-SOIC
Supplier Device Package
8-SO
Family Part Number
SI4941
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
60 pct.
Supply and Demand Status
Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

SI4941EDY-T1-E3 Relevant information

SI4900DY
SI4900DY

N-Channel 60-V (D-S) MOSFET

SI4900DY-T1-E3
SI4900DY-T1-E3

MOSFET 2N-CH 60V 5.3A 8-SOIC / Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R

SI4900DY-T1-GE3
SI4900DY-T1-GE3

MOSFET 2N-CH 60V 5.3A 8-SOIC / Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surface Mount 8-SOIC

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