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SIHB33N60ET1-GE3

FETs - Single

Manufacturer No:
SIHB33N60ET1-GE3
Manufacture:
Vishay
Datasheet:
SIHB33N60ET1-GE3
Description:
MOSFET N-CH 600V 33A TO263

In Stock

10800 pcs On sales

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Shipping Method
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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIHB33N60ET1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIHB33N60ET1-GE3.

Manufacturer
Vishay Siliconix
Packaging
Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) at 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Maximum) at Id, Vgs
99mOhm at 16.5A, 10V
Vgs(th) (Maximum) at Id
4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
150nC at 10V
Maximum Vgs
±30V
Input Capacitance (Ciss) (Maximum) at Vds
3508pF at 100V
Power Dissipation (Maximum)
278W (Tc)
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Supplier Device Package
TO-263 (D2Pak)
Manufacturer Package
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity
800
MSL Level
1 (Unlimited)
Popularity
High
Fake Threat In the Open Market
68 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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