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SIHH180N60E-T1-GE3

Name: SIHH180N60E-T1-GE3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: SIHH180N60E-T1-GE3
Manufacture:: Vishay
Package:: 8-PowerTDFN
Datasheet:: SIHH180N60E-T1-GE3

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0 pcs On sales

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIHH180N60E-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIHH180N60E-T1-GE3.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Vishay Siliconix
Series: E
Package: Tape & Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Power Dissipation (Max): 114W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Product Number: SIHH180
Other Names: SIHH180N60E-T1-GE3TR,SIHH180N60E-T1-GE3CT,SIHH180N60E-T1-GE3DKR
Standard Package: 3,000
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095
Fake Threat In the Open Market: 74 pct.

Company Profile

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