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SIHL630STRL-GE3

Name: SIHL630STRL-GE3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

Custom Parts (S - T)

Manufacturer No:: SIHL630STRL-GE3
Manufacture:: Vishay
Package:: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet:: SIHL630STRL-GE3
Description:: MOSFET N-CH 200V 9A D2PAK / N-Channel 200 V 9A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount D²PAK (TO-263)

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0 pcs On sales

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIHL630STRL-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIHL630STRL-GE3.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Vishay Siliconix
Package: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: D2PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number: SIHL630
MSL Level: 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095
Standard Package: 800
Fake Threat In the Open Market: 82 pct.

Company Profile

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