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SISS30ADN-T1-GE3

Name: SISS30ADN-T1-GE3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

OEM Parts ( S )

Manufacturer No:: SISS30ADN-T1-GE3
Manufacture:: Vishay
Package:: PowerPAK® 1212-8S
Datasheet:: SISS30ADN-T1-GE3
Description:: MOSFET N-CH 80V 15.9A/54.7A PPAK / N-Channel 80 V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S

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0 pcs On sales

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SISS30ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SISS30ADN-T1-GE3.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 40 V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Product Number: SISS30
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: 742-SISS30ADN-T1-GE3TR,742-SISS30ADN-T1-GE3CT,742-SISS30ADN-T1-GE3DKR
Standard Package: 3,000
Fake Threat In the Open Market: 73 pct.

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