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SIZ998BDT-T1-GE3

Name: SIZ998BDT-T1-GE3
Brand: Vishay
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

OEM Parts ( S )

Manufacturer No:: SIZ998BDT-T1-GE3
Manufacture:: Vishay
Package:: 8-PowerWDFN
Datasheet:: SIZ998BDT-T1-GE3
Description:: DUAL N-CHANNEL 30-V (D-S) MOSFET / Mosfet Array 2 N-Channel (Dual), Schottky 30V 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Surface Mount 8-PowerPair® (6x5)

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0 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIZ998BDT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIZ998BDT-T1-GE3.

Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Mounting: SMD (SMT)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Base Product Number: SIZ998
ECCN: EAR99
HTSUS: 8541.29.0095
Other Names: 742-SIZ998BDT-T1-GE3TR,742-SIZ998BDT-T1-GE3DKR,742-SIZ998BDT-T1-GE3CT
Standard Package: 3,000
Fake Threat In the Open Market: 66 pct.

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