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SIZ998DT-T1-GE3

FETs - Arrays

Manufacturer No:
SIZ998DT-T1-GE3
Manufacture:
Vishay
Datasheet:
SIZ998DT-T1-GE3
Description:
MOSFET 2 N-CH 30V 8-POWERPAIR

In Stock

5200 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Vishay SIZ998DT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay SIZ998DT-T1-GE3.

Categories
Discrete Semiconductor Products
Manufacturer
Vishay Siliconix
Packaging
Reel
Transistor Polarity
2 N-Channel (Dual), Schottky
FET Feature
Standard
Vds - Drain-Source Breakdown Voltage
30V
Id - Continuous Drain Current
20A, 60A
Rds On (Maximum) at Id, Vgs
6.7mOhm at 15A, 10V, 2.8mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id
2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs
8.1nC at 4.5V, 19.8nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds
930pF at 15V, 2620pF at 15V
Maximum Power
20.2W, 32.9W
Temperature Range - Operating
-55°C ~ 150°C
Mounting Style
SMD
Manufacturer Package
8-PowerWDFN
Supplier Device Package
8-PowerPair
Manufacturer Pack Quantity
1
MSL Level
1 (Unlimited)
Popularity
Low
Fake Threat In the Open Market
47 pct.
Supply and Demand Status
Balance

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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