Images are for reference only.Please communicate with sales for
detailed product
parameters
C2M0160120D
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- C2M0160120D
- Manufacture:
- Cree/Wolfspeed
- Datasheet:
- C2M0160120D
- Description:
- Trans MOSFET N-CH SiC 1.2KV 18A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 1200V 19A TO-247
In Stock
3484 pcs On sales
Purchase and inquiry
Purchase
You may place an order without registering to Micro Mall.
We strongly suggest you sign in before purchasing as you can track your order in real time.
Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Cree/Wolfspeed C2M0160120D technical specifications, attributes, parameters and parts with similar specifications to Cree/Wolfspeed C2M0160120D.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Cree/Wolfspeed
- Packaging
- Tube/Rail
- Status
- Active
- Polarity
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain-Source Breakdown Voltage
- 1200V
- Continuous Drain Current at 25°C
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Gate-Source Threshold Voltage
- 2.5V @ 500μA
- Max Gate Charge
- 32.6nC @ 20V
- Max Input Capacitance
- 527pF @ 800V
- Maximum Gate-Source Voltage
- +25V, -10V
- Power Dissipation (Max)
- 125W (Tc)
- Maximum Rds On at Id,Vgs
- 196 mOhm @ 10A, 20V
- Temperature Range - Operating
- -55°C to 150°C (TJ)
- Mounting
- Through Hole
- Case / Package
- TO-247-3
- Dimension
- TO-247-3
- Is this a common-used part?
- Yes
- Popularity
- High
- Fake Threat In the Open Market
- 63 pct.
- Supply and Demand Status
- Limited
- Family Name
- C2M0160120D
- Introduction Date
- September 02, 2015
- ECCN
- ERA99
- Country of Origin
- China, Philippines, United States of America
- Estimated EOL Date
- 2031
Company Profile
C2M0160120D Relevant information
C2M0025120D
MOSFET N-CH 1200V 90A TO-247 / Trans MOSFET N-CH SiC 1.2KV 90A 3-Pin(3+Tab) TO-247
C2M0040120D
SICFET N-CH 1200V 60A TO247-3
C2M0080120D
Silicon Carbide Power MOSFET Z-FETTM MOSFET
C2M0160120D
Trans MOSFET N-CH SiC 1.2KV 18A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 1200V 19A TO-247
C2M0280120D
SICFET N-CH 1200V 10A TO247-3 / N-Channel 1200 V 10A (Tc) 62.5W (Tc) Through Hole TO-247-3