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C3M0280090D
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- C3M0280090D
- Manufacture:
- Cree/Wolfspeed
- Package:
- TO-247-3
- Datasheet:
- C3M0280090D
- Description:
- SICFET N-CH 900V 11.5A TO247-3 / N-Channel 900 V 11.5A (Tc) 54W (Tc) Through Hole TO-247-3
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Shipping Cost
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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Cree/Wolfspeed C3M0280090D technical specifications, attributes, parameters and parts with similar specifications to Cree/Wolfspeed C3M0280090D.
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
- Mfr
- Wolfspeed, Inc.
- Series
- C3M™
- Package
- Tube
- FET Type
- N-Channel
- Technology
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)
- 900 V
- Current - Continuous Drain (Id) @ 25°C
- 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Rds On (Max) @ Id, Vgs
- 360mOhm @ 7.5A, 15V
- Vgs(th) (Max) @ Id
- 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs
- 9.5 nC @ 15 V
- Vgs (Max)
- +18V, -8V
- Input Capacitance (Ciss) (Max) @ Vds
- 150 pF @ 600 V
- Power Dissipation (Max)
- 54W (Tc)
- Temperature Range - Operating
- -55°C ~ 150°C (TJ)
- Mounting Type
- Through Hole
- Supplier Device Package
- TO-247-3
- Package / Case
- TO-247-3
- Base Product Number
- C3M0280090
- MSL Level
- 1 (Unlimited)
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Standard Package
- 30
- Fake Threat In the Open Market
- 70 pct.
Company Profile
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C3M0280090D
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