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E4D20120G
- Manufacturer No:
- E4D20120G
- Manufacture:
- Cree/Wolfspeed
- Package:
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- E4D20120G
- Description:
- 1200 V 20 A SCHOTTKY DIODE (SING / Diode Silicon Carbide Schottky 1200 V 56A (DC) Surface Mount TO-263-2
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0 pcs On sales
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Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Cree/Wolfspeed E4D20120G technical specifications, attributes, parameters and parts with similar specifications to Cree/Wolfspeed E4D20120G.
- Category
- Discrete Semiconductor Products>Diodes - Rectifiers - Single
- Mfr
- Wolfspeed, Inc.
- Series
- E-Series, Automotive
- Package
- Tube
- Diode Type
- Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max)
- 1200 V
- Current - Average Rectified (Io)
- 56A (DC)
- Voltage - Forward (Vf) (Max) @ If
- 1.8 V @ 20 A
- Speed
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)
- 0 ns
- Current - Reverse Leakage @ Vr
- 200 µA @ 200 µA
- Capacitance @ Vr, F
- 1474pF @ 0V, 1MHz
- Mounting
- SMD (SMT)
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package
- TO-263-2
- Operating Temperature - Junction
- -55°C ~ 175°C
- Base Product Number
- E4D20120
- MSL Level
- 1 (Unlimited)
- ECCN
- EAR99
- HTSUS
- 8541.10.0080
- Other Names
- 1697-E4D20120G
- Standard Package
- 50
- Fake Threat In the Open Market
- 57 pct.
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