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DMG6601LVT-7
Transistors - FETs, MOSFETs - RF
- Manufacturer No:
- DMG6601LVT-7
- Manufacture:
- Diodes Incorporated
- Datasheet:
- DMG6601LVT-7
- Description:
- MOSFET N/P-CH 30V 26TSOT
In Stock
44900 pcs On sales
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Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Diodes Incorporated DMG6601LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG6601LVT-7.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Diodes Incorporated
- Packaging
- Reel - TR
- Status
- Active
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain-Source Breakdown Voltage
- 30V
- Continuous Drain Current at 25°C
- 3.8A, 2.5A
- Maximum Rds On at Id,Vgs
- 55 mOhm @ 3.4A, 10V
- Gate-Source Threshold Voltage
- 1.5V @ 250μA
- Max Gate Charge
- 12.3nC @ 10V
- Max Input Capacitance
- 422pF @ 15V
- Maximum Power Dissipation
- 850mW
- Temperature Range - Operating
- -55°C to 150°C (TJ)
- Mounting
- SMD (SMT)
- Case / Package
- TSOT-26
- Family Name
- DMG6601LVT
- Introduction Date
- July 06, 2012
- ECCN
- EAR99
- Country of Origin
- China
- Halogen Free
- Compliant
- Estimated EOL Date
- 2027
- Is this a common-used part?
- Yes
- Popularity
- High
- Fake Threat In the Open Market
- 37 pct.
- Supply and Demand Status
- Limited
Company Profile
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