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G10N120BN
- Manufacturer No:
- G10N120BN
- Manufacture:
- Fairchild/ON Semiconductor
- Datasheet:
- G10N120BN
- Description:
- IGBT 1200V 35A 298W TO247
In Stock
27000 pcs On sales
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Shipping Cost
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Fairchild/ON Semiconductor G10N120BN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor G10N120BN.
- Categories
- Discrete Semiconductor Products
- Manufacturer
- Fairchild/ON Semiconductor
- Packaging
- Tube/Rail
- Status
- Not For New Designs
- IGBT Type
- NPT
- VCEO Maximum Collector-Emitter Breakdown Voltage
- 1200V
- Maximum Current Collector
- 35A
- Pulsed Collector Current
- 80A
- Collector-emitter saturation voltage(Max)
- 2.7V @ 15V, 10A
- Maximum Power Dissipation
- 298W
- Total Switching Energy(Ets)
- 850μJ (on), 800μJ (off)
- Input Type
- Standard
- Gate Charge
- 100nC
- Turn-on and Turn-off delay time
- 23ns/165ns
- Testing Conditions
- 960V, 10A, 10 Ohm, 15V
- Reverse Recovery Time (trr)
- 70ns
- Temperature Range - Operating
- -55°C to 150°C (TJ)
- Mounting
- Through Hole
- Case / Package
- TO-247
- Popularity
- Medium
- Fake Threat In the Open Market
- 45 pct.
- Supply and Demand Status
- Limited
Company Profile
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G10N120BN Relevant information
G10N120BN
IGBT 1200V 35A 298W TO247
G10N120BND
IGBT 1200V 35A 298W TO247