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HGTP10N120BN

Name: HGTP10N120BN
Brand: Fairchild/ON Semiconductor
Price: 3.41 USD
Rating: 4.8 (6586 reviews)

IGBTs - Single

Manufacturer No:: HGTP10N120BN
Manufacture:: Fairchild/ON Semiconductor
Datasheet:: HGTP10N120BN
Description:: IGBT 1200V 35A 298W TO220AB

In Stock

32000 pcs On sales

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Product Attribute

Fairchild/ON Semiconductor HGTP10N120BN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor HGTP10N120BN.

Categories: Discrete Semiconductor Products
Manufacturer: Fairchild/ON Semiconductor
Packaging: Tube/Rail
Status: Not For New Designs
IGBT Type: NPT
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Current Collector: 35A
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Maximum Power Dissipation: 298W
Total Switching Energy(Ets): 320μJ (on), 800μJ (off)
Input Type: Standard
Gate Charge: 100nC
Turn-on and Turn-off delay time: 23ns/165ns
Testing Conditions: 960V, 10A, 10 Ohm, 15V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: Through Hole
Case / Package: TO-220AB
Family Name: HGTP10N120BN
Introduction Date: January 08, 2002
ECCN: EAR99
Country of Origin: China, Republic of Korea
Halogen Free: Compliant
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 800

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