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A2T26H160-24SR3

Transistors - FETs, MOSFETs - RF

Manufacturer No:
A2T26H160-24SR3
Manufacture:
Freescale Semiconductor - NXP
Package:
NI-780S-4L2L
Datasheet:
A2T26H160-24SR3
Description:
RF POWER FIELD-EFFECT TRANSISTOR / RF Mosfet LDMOS (Dual) 28 V 350 mA 2.58GHz 15.5dB 28W NI-780S-4L2L

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Product Attribute

Freescale Semiconductor - NXP A2T26H160-24SR3 technical specifications, attributes, parameters and parts with similar specifications to Freescale Semiconductor - NXP A2T26H160-24SR3.

Category
Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr
Freescale Semiconductor
Package
Bulk
Transistor Type
LDMOS (Dual)
Frequency
2.58GHz
Gain
15.5dB
Voltage - Test
28 V
Current - Test
350 mA
Power - Output
28W
Voltage - Rated
65 V
Package / Case
NI-780S-4L2L
Supplier Device Package
NI-780S-4L2L
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
NXPFREA2T26H160-24SR3,2156-A2T26H160-24SR3
Standard Package
1
Fake Threat In the Open Market
58 pct.

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RF POWER FIELD-EFFECT TRANSISTOR / RF Mosfet LDMOS (Dual) 28 V 350 mA 2.58GHz 15.5dB 28W NI-780S-4L2L

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