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detailed product
parameters
GC11N65K
- Manufacturer No:
- GC11N65K
- Manufacture:
- Goford Semiconductor
- Package:
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- GC11N65K
- Description:
- N650V,RD(MAX)<
In Stock
0 pcs On sales
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Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Goford Semiconductor GC11N65K technical specifications, attributes, parameters and parts with similar specifications to Goford Semiconductor GC11N65K.
- Category
- Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
- Mfr
- Goford Semiconductor
- Package
- Tape & Reel
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 650 V
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 360mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs
- 21 nC @ 10 V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 901 pF @ 50 V
- Power Dissipation (Max)
- 78W (Tc)
- Temperature Range - Operating
- -55°C ~ 150°C (TJ)
- Mounting
- SMD (SMT)
- Supplier Device Package
- TO-252
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MSL Level
- 3 (168 Hours)
- ECCN
- EAR99
- HTSUS
- 8541.29.0095
- Other Names
- 3141-GC11N65KTR,3141-GC11N65KDKR,3141-GC11N65KCT
- Standard Package
- 2,500
- Fake Threat In the Open Market
- 54 pct.
Company Profile
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GC11N65K Relevant information
GC11N65K
N650V,RD(MAX)<