Images are for reference only.Please communicate with sales for
detailed product
parameters
BDP 949 E6327
- Manufacturer No:
- BDP 949 E6327
- Manufacture:
- Infineon Technologies
- Datasheet:
- BDP 949 E6327
- Description:
- Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
In Stock
0 pcs On sales
Purchase and inquiry
Purchase
You may place an order without registering to Micro Mall.
We strongly suggest you sign in before purchasing as you can track your order in real time.
Means of Payment
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.RFQ (Request for Quotations)
It is recommended to request for quotations to get the latest prices and inventories about the part. Our sales will reply to your request by email within 24 hours.IMPORTANT NOTICE
1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.
Shipping Cost
Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.) The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.Shipping Method
Currently, our products are shipped through DHL, FedEx, SF, and UPS.Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.Product Attribute
Infineon Technologies BDP 949 E6327 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BDP 949 E6327.
- Mounting
- SMD (SMT)
- Case / Package
- SOT-223-4
- Collector Base Voltage (VCBO)
- 60 V
- Collector Emitter Breakdown Voltage
- 60 V
- Collector Emitter Voltage (VCEO)
- 60 V
- Contact Plating
- Tin
- Current Rating
- 3 A
- Element Configuration
- Single
- Emitter Base Voltage (VEBO)
- 5 V
- Frequency
- 100 MHz
- Gain Bandwidth Product
- 100 MHz
- Lead Free
- Yes
- Max Breakdown Voltage
- 60 V
- Max Collector Current
- 3 A
- Maximum Operating Temperature
- 150 °C
- Max Power Dissipation
- 5 W
- Min Operating Temperature
- -65 °C
- Mount
- Surface Mount
- Number of Elements
- 1
- Number of Pins
- 4
- Polarity
- NPN
- Power Dissipation
- 5 W
- RoHS
- Compliant
- Transition Frequency
- 100 MHz
- Voltage Rating (DC)
- 60 V
- Categories
- RF Transistors(BJT)
- Manufacturer
- Infineon Technologies
- Popularity
- Low
- Fake Threat In the Open Market
- 37 pct.
- Supply and Demand Status
- Shortage
Company Profile
BDP 949 E6327 Relevant information
BDP 949 E6327
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon