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BSP50H6327XTSA1

Name: BSP50H6327XTSA1
Brand: Infineon Technologies
Price: 1.5 USD
Rating: 4.8 (6586 reviews)

RF Transistors (BJT)

Manufacturer No:: BSP50H6327XTSA1
Manufacture:: Infineon Technologies
Package:: TO-261-4, TO-261AA
Datasheet:: BSP50H6327XTSA1
Description:: TRANS NPN DARL 45V 1A SOT223-4 / Bipolar (BJT) Transistor NPN - Darlington 45 V 1 A 200MHz 1.5 W Surface Mount PG-SOT223-4

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies BSP50H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP50H6327XTSA1.

Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr: Infineon Technologies
Package: Tape & Reel (TR)
Product Status: Not For New Designs
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1.5 W
Frequency - Transition: 200MHz
Temperature Range - Operating: 150°C (TJ)
Mounting: SMD (SMT)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Base Product Number: BSP50
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0075
Other Names: SP000748534,BSP 50 H6327,BSP 50 H6327-ND
Standard Package: 1,000
Fake Threat In the Open Market: 56 pct.

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