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BSP88H6327XTSA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
BSP88H6327XTSA1
Manufacture:
Infineon Technologies
Datasheet:
BSP88H6327XTSA1
Description:
MOSFET N-CH 4SOT223

In Stock

79900 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies BSP88H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP88H6327XTSA1.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
240V
Continuous Drain Current at 25°C
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Gate-Source Threshold Voltage
1.4V @ 108μA
Max Gate Charge
6.8nC @ 10V
Max Input Capacitance
95pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
1.8W (Ta)
Maximum Rds On at Id,Vgs
6 Ohm @ 350mA, 10V
Temperature Range - Operating
-55°C to 150°C (TJ)
Mounting
SMD (SMT)
Case / Package
PG-SOT223-4
Dimension
TO-261-4, TO-261AA
Popularity
Medium
Fake Threat In the Open Market
31 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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