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BSZ100N06LS3 G

Name: BSZ100N06LS3 G
Brand: Infineon Technologies
Price: 6.26 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: BSZ100N06LS3 G
Manufacture:: Infineon Technologies
Datasheet:: BSZ100N06LS3 G
Description:: MOSFET N-CH 60V 20A TSDSON-8

In Stock

15000 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies BSZ100N06LS3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSZ100N06LS3 G.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Series: OptiMOS
Packaging: Reel package
Channel Type Type: N
Technology: MOSFET
Drain Source Voltage: 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Maximum) @ Id: 2.2V @ 23μA
Gate Charge (Qg) (Maximum) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3500pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.1W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs: 10 mOhm @ 20A, 10V
Operating Temperature Range: -55°C ~ 150°C (TJ)
Mounting: SMD
Manufacturer Package: PG-TSDSON-8
Package: 8-PowerVDFN
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

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