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IPA90R1K0C3

Name: IPA90R1K0C3
Brand: Infineon Technologies
Price: 12.41 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IPA90R1K0C3
Manufacture:: Infineon Technologies
Datasheet:: IPA90R1K0C3
Description:: MOSFET N-CH 900V 5.7A TO220-3

In Stock

65100 pcs On sales

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Shipping Cost

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPA90R1K0C3 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPA90R1K0C3.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Packaging: Tube/Rail
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate-Source Threshold Voltage: 3.5V @ 370μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 850pF @ 100V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 32W (Tc)
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.3A, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Mounting: Through Hole
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Company Profile

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