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IPB009N03L G

Name: IPB009N03L G
Brand: Infineon Technologies
Price: 12.8 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IPB009N03L G
Manufacture:: Infineon Technologies
Datasheet:: IPB009N03L G
Description:: MOSFET N-CH 30V 180A TO263-7

In Stock

5000 pcs On sales

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Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPB009N03L G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB009N03L G.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Packaging: Reel - TR
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 227nC @ 10V
Max Input Capacitance: 25000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 250W (Tc)
Maximum Rds On at Id,Vgs: 0.95 mOhm @ 100A, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Mounting: SMD (SMT)
Case / Package: PG-TO263-7-3
Dimension: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.