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IPD031N03LGATMA1

Name: IPD031N03LGATMA1
Brand: Infineon Technologies
Price: 16.62 USD
Rating: 4.8 (6586 reviews)

Transistors - FETs, MOSFETs - RF

Manufacturer No:: IPD031N03LGATMA1
Manufacture:: Infineon Technologies
Datasheet:: IPD031N03LGATMA1
Description:: MOSFET N-CH 30V 90A TO252-3

In Stock

5050 pcs On sales

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPD031N03LGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD031N03LGATMA1.

Categories: Discrete Semiconductor Products
Manufacturer: Infineon Technologies
Packaging: Reel - TR
Status: Active
Polarity: N-Channel
Technology: MOSFET
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 5300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Power Dissipation (Max): 94W (Tc)
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 30A, 10V
Temperature Range - Operating: -55°C to 175°C (TJ)
Mounting: SMD (SMT)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Company Profile

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