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IPD600N25N3GATMA1

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPD600N25N3GATMA1
Manufacture:
Infineon Technologies
Datasheet:
IPD600N25N3GATMA1
Description:
MOSFET N-CH 250V 25A

In Stock

10300 pcs On sales

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Delivery Time
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days. The following are some common countries' logistic time.

Product Attribute

Infineon Technologies IPD600N25N3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD600N25N3GATMA1.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Reel - TR
Status
Active
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
250V
Continuous Drain Current at 25°C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 90μA
Max Gate Charge
29nC @ 10V
Max Input Capacitance
2350pF @ 100V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
136W (Tc)
Maximum Rds On at Id,Vgs
60 mOhm @ 25A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
PG-TO252-3
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
61 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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