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IPD80N04S3-06

Transistors - FETs, MOSFETs - RF

Manufacturer No:
IPD80N04S3-06
Manufacture:
Infineon Technologies
Datasheet:
IPD80N04S3-06
Description:
MOSFET N-CH 40V 90A TO252-3

In Stock

43366 pcs On sales

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Product Attribute

Infineon Technologies IPD80N04S3-06 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD80N04S3-06.

Categories
Discrete Semiconductor Products
Manufacturer
Infineon Technologies
Packaging
Cut Reel
Polarity
N-Channel
Technology
MOSFET
Drain-Source Breakdown Voltage
40V
Continuous Drain Current at 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Gate-Source Threshold Voltage
4V @ 52μA
Max Gate Charge
47nC @ 10V
Max Input Capacitance
3250pF @ 25V
Maximum Gate-Source Voltage
±20V
Power Dissipation (Max)
100W (Tc)
Maximum Rds On at Id,Vgs
5.2 mOhm @ 80A, 10V
Temperature Range - Operating
-55°C to 175°C (TJ)
Mounting
SMD (SMT)
Case / Package
PG-TO252-3
Dimension
TO-252-3, DPak (2 Leads + Tab), SC-63
Popularity
Medium
Fake Threat In the Open Market
50 pct.
Supply and Demand Status
Sufficient

Company Profile

We are the professional distributor of electronic components providing a large variety of products to save you a lot of time, effort and cost with our efficient self-customized service. careful order preparation fast delivery service. Powerful enterprise management system, warehouse management system, strict product quality inspection system and convenient delivery system are suitable for each terminal PC/mobile platform.

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